Mosfet K3878

Mosfet is a 3 terminal semiconductor device used in a wide range of electronic circuits. It works like a JFET but has less current leakage owing to an oxide insulation between the conductors. Mosfet is a good choice for building linear amplifiers owing to its lesser load, and any amplifier made using it is called a Mosfet amplifier. In this video I demonstrate how to test a MOSFET transistor with a digital fluke multimeter in the off state and the on state. This transistor came out of a.

This post explains for the semiconductor K3878.

This is one of the MOSFET types. This is a kind of the transistor.

The Part Number is K3878.

The function of this semiconductor is 900V, Field Effect Transistor.

Manufacturers : Toshiba,

MOSFET TRANSISTORS 2SK3878 K3878 TO3P BEST PRICE NEW AND ORIGINAL. US $0.67-$0.70 / Piece. Order) Shenzhen Bailisheng Technology Co., Ltd. 4.3 (7) 'Fast delivery' 'Excellent company' Contact Supplier. SVF3878 instead SK3878 K3878 To-3p 9a 900v Welding Machine Mosfet transistor original.

Iimages :

Pinout : 1. Gate 2. Dreain ( Heatsink ) 3. Source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = 900 V
3. Drain current : ID = 9 A
4. Drain power dissipation : PD = 150 W
5. Single pulse avalanche energy : Eas = 778 mJ
6. Avalanche curren : Iar = 9 A
7. Repetitive avalanche energy : Ear = 15 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

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Description :

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)

Features

1. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

3. Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Applications

: Switching Regulator

K3878 Datasheet

Part Number : K3878

2SK3878

Function : Silicon N-Channel MOS Field Effect Transistor

Harga Mosfet K3878

Package : TO-3P type

K3878

Manufacturers : Toshiba

Image


Application : Switching Regulator

Features for K3878

1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

K3878


Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current DC : ID = 9, Pulse : IDP = 27 A
5. Drain power dissipation (Tc = 25°C) : PD = 150 W
6. Single pulse avalanche energy : EAS = 778 mJ
7. Avalanche current : IAR = 9 A
8. Repetitive avalanche energy : EAR = 15 mJ
9. Channel temperature : Tch = 150°C

See Full List On Alldatasheet.com

Pinouts :

K3878 Datasheet

Other data sheets within the file : 2SK3878

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